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| MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * * * * * * * * Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package K A C2 B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B C D F M E2 B2 C1 G H Mechanical Data Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K46 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) J D C2 B1 E1 0.65 Nominal H F L J K L M a E2 B2 C1 All Dimensions in mm E1, B1, C1 = PNP3906 Section E2, B2, C2 = NPN3904 Section Maximum Ratings, NPN 3904 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1, 2) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA NPN 3904 Section 60 40 6.0 200 200 625 Unit V V V mA mW C/W Maximum Ratings, PNP 3906 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Notes: @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA PNP 3906 Section -40 -40 -5.0 -200 200 625 Unit V V V mA mW C/W 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. DS30123 Rev. 4 - 2 1 of 5 www.diodes.com MMDT3946 Electrical Characteristics, NPN 3904 Section Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol @ TA = 25C unless otherwise specified Min 60 40 5.0 3/4 3/4 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 Max 3/4 3/4 6.0 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 3/4 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Note: VCE(SAT) VBE(SAT) V V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 3/4 mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 20mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz td tr ts tf 3/4 3/4 3/4 3/4 35 35 200 50 ns ns ns ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 3. Short duration test pulse used to minimize self-heating effect. DS30123 Rev. 4 - 2 2 of 5 www.diodes.com MMDT3946 Electrical Characteristics, PNP 3906 Section Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol @ TA = 25C unless otherwise specified Min -40 -40 -5.0 3/4 3/4 60 80 100 60 30 3/4 -0.65 3/4 3/4 3/4 2.0 0.1 100 3.0 250 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 3/4 300 3/4 3/4 -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 3/4 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 3/4 mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz td tr ts tf 3/4 3/4 3/4 3/4 35 35 225 75 ns ns ns ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Ordering Information Device MMDT3946-7 Notes: (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K46 K46 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30123 Rev. 4 - 2 3 of 5 www.diodes.com YM MMDT3946 15 f = 1MHz 300 250 200 150 100 50 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 350 PD, POWER DISSIPATION (mW) 10 5 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (NPN-3904) 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-3904) 10 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-3904) 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) IC IB = 10 f = 1MHz VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 10 Cibo 0.1 0.1 Cobo 1 10 100 1000 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-3904) VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (PNP-3906) DS30123 Rev. 4 - 2 4 of 5 www.diodes.com MMDT3946 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 1 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-3906) 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-3906) 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-3906) DS30123 Rev. 4 - 2 5 of 5 www.diodes.com MMDT3946 |
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